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Chinsor Tech focuses on the development and manufacturing of key cavities and epitaxial components of the front-line semiconductor wafer manufacturing equipment, with independent technology accumulation and a high proportion of invention patents to enable the efficient operation of mature process production lines. Chinsor Tech has its own physical mass production plant and a complete production supply chain system. As a pure source manufacturer rather than a transshipment trader, we can directly eliminate the middleman premium for you and provide faster international order delivery speed and highly competitive direct ex-factory price.
This product is mainly used in thin film chemical vapor deposition process, physical vapor deposition wafer heating, vacuum reaction chamber construction and high density dry plasma etching processing equipment in semiconductor wafer manufacturing equipment.
the surface of the internal reaction cavity of semiconductor wafer manufacturing equipment is fully treated with high-density anodic oxidation, and the film thickness is uniform and greater than 50 microns. In the face of high-intensity process gas bombardment, the number of dust particles in the cavity can be reduced by more than 85%, directly blocking wafer impurity contamination and significantly improving the yield of the chip patterning process.
all precision parts for semiconductor wafer manufacturing equipment are integrated with advanced multi-axis CNC machine tools, mechanical tolerance is strictly limited to plus or minus 0.01mm. This allows the components to be 100% seamlessly adapted to the mainstream process platform, and field engineers can complete rapid assembly without making secondary corrections.
the key cover ring and shower head components inside the equipment are fully selected from electronic grade ceramics and high-purity quartz with a purity of up to 99.99%. The material has a very low substrate consumption rate in a highly corrosive plasma environment, which can extend the overall service life of components by more than 3 months, effectively reducing the procurement cost of production line consumables.
The wafer heating system in semiconductor wafer manufacturing equipment has undergone precise internal structural improvements, so that the overall surface temperature unevenness of an eight-inch wafer is controlled within plus or minus 1 degrees Celsius under a high temperature process of more than 400 degrees Celsius. This helps to greatly eliminate the edge effect of thin film deposition and ensures that the thickness of the dielectric layer is highly consistent in all areas of the wafer.
every factory-delivered semiconductor wafer manufacturing equipment vacuum chamber component is fully loaded with a high-sensitivity helium mass spectrometer for leak detection, and the overall gas leak rate is stably controlled at a very low level. Excellent static seal retention eliminates pressure fluctuations due to trace leaks during the process, perfectly guaranteeing the stability of the chemical vapor deposition gas flow.
The core conductive circuit and RF input structure of semiconductor wafer manufacturing equipment are treated with low impedance surface coating, which greatly reduces heat dissipation during high frequency energy transmission. The overall RF power transmission efficiency of the system is improved 5%, which effectively prevents the plasma from flickering or abnormally extinguishing, and ensures the continuous and efficient etching and deposition processes.
The core components of semiconductor wafer manufacturing equipment manufactured by Chinsor Tech have been deeply upgraded in the application of corrosion-resistant anodic oxide layers and dense ceramic materials, which has improved its consumption resistance in strong plasma etching environments by 40% compared to ordinary third-party refurbishments. Relying on the strong local physical factory mass production capacity, Chinsor Tech can reduce the six-month spare parts delivery cycle of the traditional international supply chain to a few weeks, helping fabs to establish a more secure and flexible localized parts library.
In view of the pain points that mature process semiconductor wafer manufacturing equipment is prone to sudden drop of vacuum degree and abnormal termination of process due to micro-vibration at the joint of the chamber during long-term high-power operation, we have solved the problems of accelerated wear of sealing surface of vacuum valve and frequent fluctuation of air pressure by improving the design of geometric sealing groove and connection rigidity of the chamber.
In order to solve the problem that the critical dimensions of wafer edge chips exceed the standard due to too fast heat dissipation at the edge of the heating plate in the process of large-scale thin film deposition, we have designed the array power density redistribution of the internal heating wire to solve the problems of excessive temperature gradient on the wafer surface and low yield of edge chips.
In view of the pain point that traditional semiconductor wafer manufacturing equipment has to be shut down frequently for equipment maintenance due to insufficient tolerance of the cover ring and easy peeling of tiny particles to contaminate the wafer surface under frequent plasma bombardment, we have fully adopted high-purity compact ceramic consumables to solve the problem of frequent shutdown for PM reducing the overall productivity of the production line.
suitable for senior managers responsible for the smooth operation of six-inch or eight-inch wafer production line equipment. The product can be used as a long-term stable high-quality alternative source, helping it to significantly reduce the daily annual maintenance costs of semiconductor wafer manufacturing equipment without sacrificing process yield.
suitable for independent technical teams specializing in the renovation of old machines, functional upgrades and overall skin-pulling transformation. This equipment component provides highly compatible standard mechanical dimensions and interface specifications, which can perfectly assist it in quickly completing the reconstruction of the reaction cavity part of the old system and the recovery of process parameters.
Suitable for new plant or expansion project purchasing decision makers who screen high-quality hardware supply chains on a global scale. Chinsor Tech’s high percentage of patent endorsements, ISO 9001 quality certification, and pure factory direct sales model are a perfect match for its compliance requirements against risk supply chain audits.
suitable for equipment managers of national key micro-nano processing open platforms such as universities and research institutes. The highly reliable and cross-contamination resistant equipment components can well cope with the harsh test of a variety of unconventional process materials and frequent switching of gases on the cavity environment in scientific research tests.
Before loading the new components into the semiconductor wafer manufacturing equipment, the sealing surface of the cavity must be thoroughly wiped with high-purity isopropyl alcohol to ensure that the surface is free of any dust, fibers and grease residues, and then the vacuum sealing ring is accurately embedded in the positioning groove.
When moving key components such as heating plates or trays into semiconductor wafer manufacturing equipment, special measuring tools must be used to calibrate the relative position of the wafer placement center and the upper spray head axis to ensure that the mechanical error is within the required range to ensure the uniformity of the subsequent process.
Do not fire the process gas immediately after the assembly is installed and the cavity is closed. The vacuum pumping system of the semiconductor wafer manufacturing equipment should be operated first, and baking should be carried out for several hours under the heating state of the machine to completely discharge the water vapor adsorbed in the cavity.
When starting up the semiconductor wafer fabrication equipment for the first time, a test process with step-by-step power should be used. Inactive gas is introduced first for low-power plasma trial operation, and the standard process formula can be introduced after confirming that the reflected power of the high-frequency matching device is normal.
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Welcome to our Frequently Asked Questions page. We have compiled answers to common questions you may have, hoping to provide you with clear and quick solutions. If you cannot find the information you need here, please feel free to contact our customer support team.
eight inch wafer
Applicable size
high quality aviation aluminum
Cavity material
hard anodic oxidation
Surface treatment