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As the source production and renovation factory of semiconductor manufacturing equipment, Chinsor Tech provides a Centura CVD platform with high process repeatability and excellent hole filling ability. We eliminate intermediate links and directly supply global customers to ensure that you can obtain extremely advantageous factory prices and shortened delivery cycles.
Centura CVD is mainly used in shallow trench isolation, interlayer dielectric film formation, passivation layer deposition and doped silicate glass process.
Using high-density plasma technology, it can achieve hole-free filling in tiny structures with an aspect ratio greater than six to one, ensuring electrical insulation performance in advanced processes.
The system supports parallel processing of four process chambers, and the wafer output per hour is increased by about 40% compared with similar single-chamber equipment, greatly reducing the production cost per wafer.
Through advanced airflow distribution and radio frequency control systems, the film thickness deviation is controlled within 5 nanometers, ensuring the consistency of semiconductor devices in complex stacked structures.
The optimized plasma film formation process can complete high-quality deposition at a lower temperature, effectively protecting the underlying sensitive metal layer and device structure from thermal damage.
The configuration of the remote cleaning system reduces the physical damage to the chamber wall, not only extends the maintenance cycle by about 500 hours, but also significantly reduces the risk of particle contamination.
The modular platform allows rapid switching between different types of reactive gases and hardware configurations, enabling the factory to quickly adjust to the production of different functional dielectric films based on order requirements.
The Centura CVD platform provided by Chinsor Tech is specifically hardened for hardware durability. Through the use of our own special coating process chamber, our service life in extremely corrosive gas environments is 25% longer than the industry average, significantly reducing the frequency of customer replacement parts. Chinsor Tech has been deep in the field of semiconductor equipment for many years. Our Centura CVD can achieve extremely high film hardness and density, especially when dealing with fluorinated silicate glass processes, the moisture absorption rate is reduced by 15%, ensuring the chemical stability of the chip in long-term operation.
In response to the difficulty of filling nanoscale trenches, our optimized film-forming algorithm ensures full coverage of dielectrics in complex terrain, eliminating the potential for circuit short-circuiting.
combined with intelligent diagnosis and early warning system, we realized the transformation from passive maintenance to active maintenance, reducing unplanned downtime by 30%.
provide a cost-effective renovation scheme for factories seeking capacity expansion, and control the initial investment cost at the 50% of the original new machine on the premise of ensuring the original process performance.
suitable for experts responsible for the stability of the logic chip or memory chip production line process to help them maintain extremely high yield and process window consistency during the mass production phase.
For companies producing power devices such as insulated gate bipolar transistors, the equipment meets the stringent requirements for thick film deposition and high breakdown voltage characteristics.
suitable for research institutes that need to develop new thin film materials based on mature platforms, providing stable physical hardware foundation and flexible process adjustment space.
to provide reliable equipment supply and technical support for project personnel who need to quickly establish production lines and achieve production within a limited budget.
before starting the equipment, the whole system vacuum leak detection and RF matcher self-inspection shall be carried out to ensure that the chamber pressure reaches the preset value of the process and the purity of the deposition environment.
according to the required film refractive index and thickness, the precise gas flow ratio and power parameters are input in the console, and the test piece is run to verify the film formation rate.
the plasma glow state and reflection power fluctuation shall be closely observed during the deposition process. In case of data deviation, stop immediately and check the gas path mass flow controller.
After each preset number of wafers are processed, an automatic cleaning program must be started, and the carbon deposits at the air inlet must be manually cleaned regularly to maintain the particle index of the equipment.
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Welcome to our Frequently Asked Questions page. We have compiled answers to common questions you may have, hoping to provide you with clear and quick solutions. If you cannot find the information you need here, please feel free to contact our customer support team.
200mm
Wafer size
1 to 4
Number of process rooms
Plasma enhanced or sub-atmospheric pressure
Deposition type
Wuxi Zhanshuo