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With superior vacuum integrity and modular chamber design, the amat Endura platform provides physical vapor deposition solutions for semiconductor manufacturing with high throughput and nanoscale film formation accuracy. As a source manufacturing plant, Chinsor Tech is deeply involved in the field of semiconductor precision equipment. It has an independent R & D and production base, eliminating middleman costs, and provides you with highly competitive direct supply prices and shorter delivery cycles.
Application scenarios: logic chip manufacturing, power device production, MEMS processing, and advanced semiconductor packaging.
Through the multi-stage pump linkage and sealing structure optimization, the rapid vacuum pumping and ultra-high vacuum maintenance are realized, the purity of the film is ensured from the source, and the impurity contamination rate is reduced by 85%.
Simultaneous configuration of multiple process chambers enables continuous deposition of different metal materials in the same system, greatly improving line flexibility and reducing contamination caused by cross-device transmission.
Equipped with a high-frequency closed-loop feedback system, the thickness tolerance of the deposition layer can be stably controlled at the nanometer level, ensuring the consistency of the electrical performance of the chip and the reliability of long-term operation.
The use of precision magnetic drive manipulator, repeat positioning accuracy of 0.1mm, in high-speed operation still maintain a very low debris rate, significantly shorten the non-processing auxiliary time.
The intelligent temperature control system can compress the substrate temperature fluctuation range within plus or minus one degree, effectively preventing the structural deformation and defects of the wafer due to thermal stress during the deposition process.
The key heated parts are made of high temperature resistant and corrosion resistant special materials, and the replacement cycle of core wearing parts is extended to more than 4,000 hours, which significantly reduces the long-term operating cost of customers.
The amat Endura upgrade provided by Chinsor Tech has optimized the path of the vacuum pump group, so that the time for the system to reach the preset working vacuum from the ambient atmosphere is 20% shorter than that of similar equipment. In terms of film density, Chinsor Tech has introduced enhanced ion beam assisted deposition technology, which makes the adhesion of the metal layer after film formation significantly higher than the conventional level in the industry.
Chinsor Tech optimizes the sputtering angle distribution and solves the problem of incomplete encapsulation that is easy to occur in complex deep hole structures by traditional physical deposition.
in view of the pain point of frequent downtime and replacement of consumables, Chinsor Tech improved the protective screen material, extending the single cleaning cycle by 30%.
To address the backwardness of early equipment control systems, Chinsor Tech provides a full set of self-developed real-time monitoring interfaces to enable seamless access of production data to the factory cloud.
It is suitable for the production of insulated gate bipolar transistors and other power devices that require extremely strict metal layer thickness and uniformity, and meets the demanding standards of process stability for car-level chips.
Provide cost-effective physical vapor deposition equipment solutions for enterprises in the expansion stage to help customers quickly achieve capacity climbing and cost recovery while ensuring yield.
For advanced packaging processes such as bump processing and rewiring layers, it provides high-quality seed layer deposition support to ensure signal transmission integrity after microelectronic packaging.
To meet the flexibility needs of scientific research institutions for a variety of metal material deposition experiments, to support the rapid adjustment of process formulations, is an ideal experimental platform for the development of a new generation of semiconductor materials.
Start the main control system and turn on the vacuum pump group. After the vacuum degree of the chamber reaches the process setting threshold, the robot coordinate reset and sensor self-test are carried out.
According to the film thickness requirements of the wafer to be produced, enter the flow rate, pressure and sputtering power parameters in the operation interface, or directly call the saved standard process formula.
Place the crystal box to be processed in the loading port, start the automatic operation program after confirming that the system is ready, and the robot will accurately feed the wafer into the preheating chamber and the process chamber.
During the processing, the plasma color and electrical indicators are checked through the observation window or real-time monitoring interface to ensure that the deposition rate is within a preset stable fluctuation range.
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Welcome to our Frequently Asked Questions page. We have compiled answers to common questions you may have, hoping to provide you with clear and quick solutions. If you cannot find the information you need here, please feel free to contact our customer support team.
two hundred to three hundred mm
Wafer size
ten minus nine torso
Ultimate vacuum
less than 3%
Deposition uniformity